Enhancement of hole injection with Mg–Si-codoped barriers in InGaN-based light-emitting diodes-Reference-Cited by-同舟云学术

Enhancement of hole injection with Mg–Si-codoped barriers in InGaN-based light-emitting diodes

Published:2014-09 Issue: Volume:326 Page:121-125
ISSN:0030-4018
Container-title:Optics Communications
language:en
Short-container-title:Optics Communications

Author:

Yang Yujue,Zeng Yiping

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Physical and Theoretical Chemistry,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference25 articles.

1. Advances in the LED Materials and Architectures for Energy-Saving Solid-State Lighting Toward “Lighting Revolution”

2. Natural white light

3. Prospects for LED lighting

4. Carrier distribution in InGaN/GaN tricolor multiple quantum well light emitting diodes

5. On the efficiency droop in InGaN multiple quantum well blue light emitting diodes and its reduction with p-doped quantum well barriers

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1. Performance enhancement of AlGaN-based UV-LEDs inserted with a pin-doped AlGaN layer between the active region and electron-blocking layer;Materials Science in Semiconductor Processing;2018-08

2. Influence of barrier layer indium on efficiency and wavelength of InGaN multiple quantum well (MQW) with and without semi-bulk InGaN buffer for blue to green regime emission;physica status solidi (a);2017-03-09

3. Improved hole distribution in InGaN light-emitting diodes with InGaN-GaN barriers of decreasing indium composition;physica status solidi (a);2015-03-17

4. Alternating InGaN barriers with GaN barriers for enhancing optical performance in InGaN light-emitting diodes;Journal of Applied Physics;2015-01-21