Suppression of efficiency droop in AlGaN based deep UV LEDs using double side graded electron blocking layer
Author:
Funder
PSA, GOVT OF INDIA
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
https://iopscience.iop.org/article/10.1088/1361-6641/ab7ce6/pdf
Reference37 articles.
1. Development and future of ultraviolet light-emitting diodes: UV-LED will replace the UV lamp
2. Development of 230-270 nm AlGaN-based deep-UV LEDs
3. AlGaN photonics: recent advances in materials and ultraviolet devices
4. Enhancement of hole injection in deep ultraviolet light-emitting diodes using a serrated P-type layer
5. On the p-AlGaN/n-AlGaN/p-AlGaN Current Spreading Layer for AlGaN-based Deep Ultraviolet Light-Emitting Diodes
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1. Carrier confinement and alloy disorder exacerbate Auger–Meitner recombination in AlGaN ultraviolet light-emitting diodes;Applied Physics Letters;2024-07-08
2. Effects of Electron Blocking Layer Thickness on the Electrical and Optical Properties of AlGaN-Based Deep-Ultraviolet Light-Emitting Diode;Journal of Electronic Materials;2024-06-05
3. Enhancing the Hole Injection in AlGaN-Based Deep Ultraviolet Light-Emitting Diodes With Engineered p-AlGaN Hole Supplier Layer;IEEE Transactions on Electron Devices;2024-05
4. Low parasitic carrier reservoir of AlGaN-based DUV-LED via controlled-polarization step-graded superlattice electron blocking layer for high luminescence lighting;Physica Scripta;2024-04-25
5. Enhanced hole injection in Ga-polar 290 nm AlGaN-based DUV LEDs with a p-n junction hole accelerator;Optical Materials Express;2023-10-30
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