Enhancement of hole injection in deep ultraviolet light-emitting diodes using a serrated P-type layer-Reference-Cited by-同舟云学术

Enhancement of hole injection in deep ultraviolet light-emitting diodes using a serrated P-type layer

Published:2019-02 Issue: Volume:433 Page:236-241
ISSN:0030-4018
Container-title:Optics Communications
language:en
Short-container-title:Optics Communications

Author:

Hou Yufei,Guo Zhiyou

Funder

Science and Technology Program Project for the Innovation of Forefront and Key Technology of Guangdong Province, China

Institute of Science and Technology Collaborative Innovation Major Project of Guangdong Province, China

Foreign Science and Technology Cooperation Program of Guangzhou, Guangdong Province, China

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Physical and Theoretical Chemistry,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference27 articles.

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2. 231–261 nm AlGaN deep-ultraviolet light-emitting diodes fabricated on AlN multilayer buffers grown by ammonia pulse-flow method on sapphire;Hirayama;Appl. Phys. Lett.,2007

3. Surface plasmon enhanced light emission from AlGaN-based ultraviolet light-emitting diodes grown on Si (111);Cho;Appl. Phys. Lett.,2013

4. Investigation of light extraction efficiency in algan deep-ultraviolet light-emitting diodes;Ryu;Appl. Phys. Exp.,2013

5. AlGaN deep-ultraviolet light-emitting diodes with external quantum efficiency above 10%;Shatalov;Appl. Phys. Exp.,2012

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1. Enhanced Performance in Deep-Ultraviolet Light-Emitting Diodes with an Undoped AlInGaN Graded Hole Reservoir Layer;2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS);2023-11-27

2. Composition-dependent trapezoidal quantum barrier effect on efficiency droop in GaN-based light-emitting diodes;Journal of the Korean Physical Society;2023-08-15

3. Optimization of AlGaN-based deep UV LED performance by p-AlInGaN/AlInGaN graded superlattice electron blocking layer;Applied Optics;2023-07-27

4. Performance improvement in AlGaN-based ultraviolet light diodes with superlattice hole reservoir layer;2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS);2023-02-07

5. The influences of AlGaN barrier epitaxy in multiple quantum wells on the optoelectrical properties of AlGaN-based deep ultra-violet light-emitting diodes;RSC Advances;2023