Performance improvement in AlGaN-based ultraviolet light diodes with superlattice hole reservoir layer-Reference-Cited by-同舟云学术

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Performance improvement in AlGaN-based ultraviolet light diodes with superlattice hole reservoir layer

Published:2023-02-07 Issue: Volume: Page:
ISSN:
Container-title:2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)
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Author:

Sang Xien¹,Yin Mengshuang¹,Xu Yuan¹,Wang Fang¹,Liou Juin J.¹,Liu Yuhuai¹

Affiliation:

1. Zhengzhou University,National Center for International Joint Research of Electronic Materials and Systems, International Joint-Laboratory of Electronic Materials and Systems of Henan Province, School of Electrical and Information Engineering,Zhengzhou,P. R. China,Henan 450001

Funder

Nature

Research and Development

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10070854/10070925/10071030.pdf?arnumber=10071030

Reference6 articles.

1. On the Near-Pole Hole Insertion Layer and the Far-Pole Hole Insertion Layer for Multi-Quantum-Well Deep Ultraviolet Light-Emitting Diodes

2. Performance optimization of deep-ultraviolet laser diodes based on hole reservoir layer;wang;Laser & Optoelectronics Progress,2022

3. Design and Optimization of Electron-Blocking Layer in Deep Ultraviolet Light-Emitting Diodes

4. Performance improvement of AlGaN-based deep ultraviolet light-emitting diodes by using staggered quantum wells

5. Enhancement of hole injection in deep ultraviolet light-emitting diodes using a serrated P-type layer

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