Performance improvement of AlGaN-based deep ultraviolet light-emitting diodes by using staggered quantum wells-Reference-Cited by-同舟云学术

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Performance improvement of AlGaN-based deep ultraviolet light-emitting diodes by using staggered quantum wells

Published:2014-11 Issue: Volume:75 Page:63-71
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Zhang Min,Li Yang,Chen Shengchang,Tian Wu,Xu Jintong,Li Xiangyang,Wu Zhihao,Fang Yanyan,Dai Jiangnan,Chen Changqing

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference25 articles.

1. Deep ultraviolet light-emitting diodes

2. AlGaN Deep-Ultraviolet Light-Emitting Diodes with External Quantum Efficiency above 10%

3. Development of high efficiency 255-355 nm AlGaN-based light-emitting diodes

4. Advances in group III-nitride-based deep UV light-emitting diode technology

5. Improvement of Luminous Efficiency in White Light Emitting Diodes by Reducing a Forward-bias Voltage

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1. Investigation on the performance of deep ultraviolet edge emitting laser diodes using graded undoped AlGaN electron blocking layer (EBL);Micro and Nanostructures;2024-08

2. Optimization of AlGaN-based deep ultraviolet light emitting diodes with superlattice step doped electron blocking layers;Optics Express;2024-03-06

3. Improved Modulation Bandwidth of c-Plane Micro-LED Arrays by Varying Si Doping in the Quantum Barrier;IEEE Transactions on Electron Devices;2024-03

4. Evaluating the performance of an AlGaN based deep ultraviolet laser diode using graded waveguide layer and graded cladding layer;Physica Scripta;2023-11-30

5. Enhancing GaN/AlGaN MQW Micro LED Optical and Electrical Performance with a Non-uniform LQB;Transactions on Electrical and Electronic Materials;2023-08-10

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