Modeling the effect of deep traps on the capacitance–voltage characteristics of p-type Si-doped GaAs Schottky diodes grown on high index GaAs substrates-Reference-Cited by-同舟云学术

Modeling the effect of deep traps on the capacitance–voltage characteristics of p-type Si-doped GaAs Schottky diodes grown on high index GaAs substrates

Published:2015-08 Issue: Volume:36 Page:156-161
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Sengouga Nouredine,Boumaraf Rami,Mari Riaz H.,Meftah Afak,Jameel Dler^ORCID,Al Saqri Noor,Azziz Mohsin,Taylor David,Henini Mohamed

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference35 articles.

1. Laplace DLTS of molecular beam epitaxy GaAs grown on (100) and (211)B substrates

2. Role of point defects in the silicon diffusion in GaAs and Al0.3Ga0.7As and in the related superlattice disordering

3. Crystal orientation dependence of silicon doping in molecular beam epitaxial AlGaAs/GaAs heterostructures

4. Orientation dependent amphoteric behavior of group IV impurities in the molecular beam epitaxial and vapor phase epitaxial growth of GaAs

5. Annealing effects on Si‐doped GaAs grown on high‐index planes by molecular‐beam epitaxy

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