Effect of thermal annealing on the electronic parameters of Al/p-Si/Cu double Schottky barrier heights-Reference-Cited by-同舟云学术

Effect of thermal annealing on the electronic parameters of Al/p-Si/Cu double Schottky barrier heights

Published:2023-05 Issue: Volume:657 Page:414566
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Okutan Mustafa^ORCID,Bablich Andreas^ORCID,Haring Bolivar Peter^ORCID

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

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5. Study of barrier height and trap centers of Au/n-Hg3In2Te6 Schottky contacts by current-voltage (I-V) characteristics and deep level transient spectroscopy;Li;J. Appl. Phys.,2015

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