Annealing temperature effect on electrical characteristics of Co/p-type Si Schottky barrier diodes
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference35 articles.
1. L.J. Brilson, in: L.J. Brilson (Ed.), Contacts to Semiconductors, Noyes, New Jersey, 1993.
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3. Relation for the nonequilibrium population of the interface states: Effects on the bias dependence of the ideality factor
4. Electrical transport characteristics of Sn/p-Si schottky contacts revealed from I–V–T and C–V–T measurements
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