Optimization of InAs/GaSb core-shell nanowire structure for improved TFET performance-Reference-Cited by-同舟云学术

Optimization of InAs/GaSb core-shell nanowire structure for improved TFET performance

Published:2019-10 Issue: Volume:101 Page:247-252
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Singh Sankalp Kumar,Kakkerla Ramesh Kumar,Joseph H. Bijo,Gupta Ankur,Anandan Deepak,Nagarajan Venkatesan,Yu Hung Wei,Thiruvadigal D. John,Chang Edward Yi

Funder

Ministry of Education

Ministry of Science and Technology

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference34 articles.

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5. Performance benchmarking of p-type In0.65Ga0.35As/GaAs0.4Sb0.6 and Ge/Ge0.93Sn0.07 hetero-junction tunnel FETs;Pandey,2016

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