Rapid thermal annealing of cerium dioxide thin films sputtered onto silicon (111) substrates: Influence of heating rate on microstructure and electrical properties-Reference-Cited by-同舟云学术

Rapid thermal annealing of cerium dioxide thin films sputtered onto silicon (111) substrates: Influence of heating rate on microstructure and electrical properties

Published:2015-02 Issue: Volume:30 Page:352-360
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Guhel Y.,Toloshniak T.,Bernard J.,Besq A.,Germanicus R. Coq,El Fallah J.,Pesant J.C.,Descamps P.,Boudart B.

Funder

Région Basse-Normandie

Syndicat Mixte du Cotentin

Fonds Européens de Développement Régional (FEDER)

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference61 articles.

1. Epitaxial growth of CeO2layers on silicon

2. Low‐temperature epitaxial growth of cerium dioxide layers on (111) silicon substrates

3. Room-Temperature Epitaxial Growth of $\bf CeO_{2}$ Thin Films on Si(111) Substrates for Fabrication of Sharp Oxide/Silicon Interface

4. In situ analysis of the room-temperature epitaxial growth of CeO2 ultrathin films on Si (111) by coaxial impact-collision ion scattering spectroscopy

5. Epitaxial Growth ofCeO2Films on Si(111) by Sputtering

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