Epitaxial Growth ofCeO2Films on Si(111) by Sputtering-Reference-Cited by-同舟云学术

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Epitaxial Growth ofCeO2Films on Si(111) by Sputtering

Published:1994-01-15 Issue:Part 1, No.1A Volume:33 Page:270-274
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Yaegashi Seiji,Kurihara Toshiya,Hoshi Hideo,Segawa Hideo

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 50 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Theoretical investigation of diffusion and electrical properties of yttria-stabilized zirconia thin film;Thin Solid Films;2021-08

2. Impact of microwave annealing on CeO2 thin films sputtered on (111) Si;Materials Research Bulletin;2015-10

3. Rapid thermal annealing of cerium dioxide thin films sputtered onto silicon (111) substrates: Influence of heating rate on microstructure and electrical properties;Materials Science in Semiconductor Processing;2015-02

4. Highly separated hybrid orientation structure of CeO2(100) and (110) on Si(100) substrates by electron beam-induced orientation-selective epitaxy;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2014-05

5. In situ Raman characterization of CeO2 thin films sputtered on (111) Si in order to optimize the post growth annealing parameters;Microelectronic Engineering;2014-04

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