Raman Study of the Comparative Effects of Conventional and Microwave Annealing on MgTiO <sub>3</sub> Thin Films Sputtered on Si Substrate-Reference-Cited by-同舟云学术

Raman Study of the Comparative Effects of Conventional and Microwave Annealing on MgTiO ₃ Thin Films Sputtered on Si Substrate

Published:2022-03-31 Issue:11 Volume:219 Page:2100640
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Physica Status Solidi (a)

Author:

Strenaer Raphaël¹,Guhel Yannick¹^ORCID,Gharbi Walid²,Macaigne Rodolphe³,Marinel Sylvain³,Boudart Bertrand¹

Affiliation:

1. Normandie Université UNICAEN ENSICAEN CNRS GREYC 14000 Caen France

2. Académie de Lille 144 Rue de Bavay 59000 Lille France

3. Normandie Université UNICAEN ENSICAEN CNRS CRISMAT 14000 Caen France

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.202100640

Reference53 articles.

1. Dielectric Properties of Low Loss (1?x)(Mg0.95Zn0.05)TiO3?xSrTiO3Ceramic System at Microwave Frequency

2. Microwave Dielectric Properties of (Mg1−xNix)2TiO4 (x=0.02-0.1) Ceramics

3. Sol−Gel Synthesis of Low-Loss MgTiO3 Thin Films by a Non-Methoxyethanol Route

4. Microwave Dielectric Properties of CaTiO3and MgTiO3Thin Films

5. MgTiO3 thin films prepared by metalorganic solution deposition and their properties

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