The influence of thickness and ammonia flow rate on the properties of AlN layers
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference19 articles.
1. Growth of high-quality and crack free AlN layers on sapphire substrate by multi-growth mode modification
2. High-electron-mobility AlGaN∕AlN∕GaN heterostructures grown on 100-mm-diam epitaxial AlN/sapphire templates by metalorganic vapor phase epitaxy
3. Structural, morphological, and optical properties of AlGaN/GaN heterostructures with AlN buffer and interlayer
4. Structural and spectroscopic properties of AlN layers grown by MOVPE
5. Growth conditions and surface morphology of AlN MOVPE
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1. HR-XRD and AFM Analysis of AlN/SiC Structures for Optoelectronic Device Applications;Gazi University Journal of Science Part A: Engineering and Innovation;2024-06-29
2. High-quality AlN growth: a detailed study on ammonia flow;Journal of Materials Science: Materials in Electronics;2023-01-25
3. Mosaic Defects of AlN Buffer Layers in GaN/AlN/4H-SiC Epitaxial Structure;Journal of Polytechnic;2021-12-31
4. Hetero-Epitaxial Growth of AlN Deposited by DC Magnetron Sputtering on Si(111) Using a AlN Buffer Layer;Coatings;2021-09-03
5. Influence of the PALE growth temperature on quality of MOVPE grown AlN/Si (111);Materials Science in Semiconductor Processing;2021-06
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