Structural, morphological, and optical properties of AlGaN/GaN heterostructures with AlN buffer and interlayer
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2747216
Reference35 articles.
1. High-temperature effects of AlGaN/GaN high-electron-mobility transistors on sapphire and semi-insulating SiC substrates
2. Gallium nitride based transistors
3. High-electron-mobility AlGaN∕AlN∕GaN heterostructures grown on 100-mm-diam epitaxial AlN/sapphire templates by metalorganic vapor phase epitaxy
4. Nanostructural characterization and two-dimensional electron-gas properties in high-mobility AlGaN∕AlN∕GaN heterostructures grown on epitaxial AlN/sapphire templates
5. Influence of AlN interfacial layer on electrical properties of high-Al-content Al 0.45 Ga 0.55 N/GaN HEMT structure
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1. AlN interlayer-induced reduction of dislocation density in the AlGaN epilayer;CrystEngComm;2024
2. Mosaic Defects of AlN Buffer Layers in GaN/AlN/4H-SiC Epitaxial Structure;Journal of Polytechnic;2021-12-31
3. Influence of AlN interlayer on AlGaN/GaN heterostructures grown by metal organic chemical vapour deposition;Materials Chemistry and Physics;2021-02
4. Effect of two step GaN buffer on the structural and electrical characteristics in AlGaN/GaN heterostructure;Vacuum;2020-08
5. Influence of Al pre-deposition time on AlGaN/GaN heterostructures grown on sapphire substrate by metal organic chemical vapor deposition;Journal of Materials Science: Materials in Electronics;2020-07-25
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