Growth conditions and surface morphology of AlN MOVPE
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference20 articles.
1. Growth of Atomically Flat-Surface Aluminum Nitride Epitaxial Film by Metalorganic Chemical Vapor Deposition
2. Growth of AlGaN Epitaxial Film with High Al Content by Metalorganic Chemical Vapour Deposition
3. 292 nm AlGaN Single-Quantum Well Light Emitting Diodes Grown on Transparent AlN Base
4. Investigation of AlN growth on sapphire substrates in a horizontal MOVPE reactor
5. Growth and design of deep-UV (240–290nm) light emitting diodes using AlGaN alloys
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1. Study of AlN growth using AMEC Prismo HiT3 MOCVD reactor;Journal of Crystal Growth;2024-01
2. Investigation of V/III ratio dependencies for optimizing AlN growth during reduced parasitic reaction in metalorganic vapor phase epitaxy;Scientific Reports;2023-02-27
3. Impacts of hydrogen flow and growth pressure on characteristics of semipolar (11 2‾ 2) plane AlInGaN quaternary epilayers;Micro and Nanostructures;2022-10
4. Effect of V/III ratio and growth pressure on surface and crystal quality of AlN grown on sapphire by metal-organic chemical vapor deposition;Journal of Vacuum Science & Technology A;2022-05
5. Role of Strain-Induced Microscale Compositional Pulling on Optical Properties of High Al Content AlGaN Quantum Wells for Deep-Ultraviolet LED;Nanoscale Research Letters;2022-01-15
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