The temperature dependent analysis of Au/TiO2 (rutile)/n-Si (MIS) SBDs using current–voltage–temperature (I–V–T) characteristics
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference60 articles.
1. Evidence for the double distribution of barrier heights in Schottky diodes fromI-V-Tmeasurements
2. On the intersecting behaviour of experimental forward bias current–voltage (I–V) characteristics of Al/SiO2/p-Si (MIS) Schottky diodes at low temperatures
3. The double Gaussian distribution of barrier heights in Au/n-GaAs Schottky diodes fromI–V–Tcharacteristics
4. The influence of series resistance and interface states on intersecting behavior ofI–Vcharacteristics of Al/TiO2/p-Si (MIS) structures at low temperatures
5. Temperature-dependent behavior of Ti/p-InP/ZnAu Schottky barrier diodes
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