Evidence for the double distribution of barrier heights in Schottky diodes fromI-V-Tmeasurements
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference13 articles.
1. Barrier inhomogeneities at Schottky contacts
2. Current-voltage characteristics and barrier parameters of Pd2Si/p-Si(111) Schottky diodes in a wide temperature range
3. Current transport in Schottky barriers prepared by ion beam sputtering
4. Forward current-voltage characteristics of Schottky barriers on n-type silicon
5. Temperature dependence of the Schottky-barrier height of tungsten on n-type and p-type silicon
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