Temperature dependence of the Schottky-barrier height of tungsten on n-type and p-type silicon
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference22 articles.
1. Surface States and Rectification at a Metal Semi-Conductor Contact
2. Schottky Barrier Heights and the Continuum of Gap States
3. Unified Mechanism for Schottky-Barrier Formation and III-V Oxide Interface States
4. Unified defect model and beyond
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