Effect of gate insulator thickness on device performance of InGaZnO thin-film transistors-Reference-Cited by-同舟云学术

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Effect of gate insulator thickness on device performance of InGaZnO thin-film transistors

Published:2015-01 Issue: Volume:29 Page:326-330
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Ding Xingwei,Zhang Jianhua,Shi Weimin,Ding He,Zhang Hao,Li Jun,Jiang Xueyin,Zhang Zhilin,Fu Chaoying

Funder

National Natural Science Foundation of China

Project of National Post-Doctor Fund

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference18 articles.

1. Pentacene organic thin-film transistors-molecular ordering and mobility

2. Effects of Green Emission on the Performance of White Organic Light-Emitting Devices and Their Electroluminescent Characteristics

3. Effect of channel widths on negative shift of threshold voltage, including stress-induced hump phenomenon in InGaZnO thin-film transistors under high-gate and drain bias stress

4. Influence of indium doping on the properties of zinc tin oxide films and its application to transparent thin film transistors

5. Influence of the InGaZnO channel layer thickness on the performance of thin film transistors

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3. Solution-Processed High Performance Ytterbium-Doped In₂O₃ Thin Film Transistor and Its Application in Common-Source Amplifier;IEEE Transactions on Electron Devices;2023-03

4. High-Performance 1-V IGZO Thin-Film Transistors Gated With Aqueous and Organic Electrolyte-Anodized Al_xO_y;IEEE Transactions on Electron Devices;2023-02

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