Crack-free Al 0.5 Ga 0.5 N epilayer grown on SiC substrate by in situ SiN x interlayer-Reference-Cited by-同舟云学术

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Crack-free Al 0.5 Ga 0.5 N epilayer grown on SiC substrate by in situ SiN x interlayer

Published:2016-01 Issue: Volume:41 Page:291-296
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Tao Pengcheng,Liang Hongwei,Xia Xiaochuan,Chen Yuanpeng,Yang Chao,Liu Jianxun,Zhu Zhifu,Liu Yang,Shen Rensheng,Luo Yingmin,Zhang Yuantao,Du Guotong

Funder

National Natural Science Foundation of China

Fundamental Research Funds for the Central Universities

Research Fund for the Doctoral Program of Higher Education

Natural Science Foundation of Liaoning provincial

Natural Science Foundation of Jiangxi provincial

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference41 articles.

1. High-quality n-type aluminum gallium nitride thin films grown by interrupted deposition and in-situ thermal annealing

2. Influence of growth interruption and Si doping on the structural and optical properties of AlxGaN/AlN (x>0.5) multiple quantum wells

3. In situ observation of two-step growth of AlN on sapphire using high-temperature metal–organic chemical vapour deposition

4. High efficiency GaN-based LEDs and lasers on SiC

5. Achieving highly conductive AlGaN alloys with high Al contents

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Improved characteristics of (11 2‾2) plane AlGaN films grown on SiNx interlayer;Materials Science in Semiconductor Processing;2024-10

2. Gas adsorption on activated AlGaN photocathode: A first-principle study on charge redistribution, work function variation and emission performance attenuation;Surfaces and Interfaces;2024-08

3. Deep insight of inter-channel coupling in AlGaN/GaN double channel HEMT and its application in C-ERB2 sensing;Physica Scripta;2024-07-22

4. Growth of nonpolar a-plane AlGaN epilayer on Al-composition graded-AlGaN buffer layer and characterization of its surface morphology and crystalline quality;Materials Research Express;2022-10-01

5. Crack-free GaN-based ultraviolet multiple quantum wells structures grown on AlN/2° misoriented sapphire template;Thin Solid Films;2018-10

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