High-performance SOI MESFET with modified depletion region using a triple recessed gate for RF applications
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference22 articles.
1. Electrical Characterization of SOI Materials and Devices;Cristoloveanu,1995
2. A novel 4H–SiC SOI-MESFET with a modified breakdown voltage mechanism for improving the electrical performance
3. A novel high frequency SOI MESFET by modified gate capacitances
4. Two-dimensional subthreshold analysis of sub-micron GaN MESFET
5. SOI MESFETs Fabricated Using Fully Depleted CMOS Technologies
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2. A novel metal–semiconductor device to enhance the current and unilateral power gains and 0 dB frequencies by SiO2 insertion in drift region;Materials Science and Engineering: B;2022-09
3. Improved 4H-SiC Metal–Semiconductor Field-Effect Transistors with Double-Symmetric-Step Buried Oxide Layer for High-Energy-Efficiency Applications;Journal of Electronic Materials;2022-05-16
4. Achieving a Considerable Output Power Density in SOI MESFETs Using Silicon Dioxide Engineering;Silicon;2021-10-11
5. Physical Analysis on the DC and RF Operations of a Novel SOI-MESFET with Protruded Gate and Dual Wells;Silicon;2021-05-25
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