Achieving a Considerable Output Power Density in SOI MESFETs Using Silicon Dioxide Engineering
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s12633-021-01414-8.pdf
Reference20 articles.
1. Cristoloveanu S, Li S (1995) Electrical characterization of silicon-on-insulator materials and devices, vol 305. Springer Science & Business Media, Berlin
2. Karbalaei M, Dideban D (2016) A novel Silicon on Insulator MOSFET with an embedded heat pass path and source side channel doping. Superlattic Microstruct 90:53–67
3. Luo X, Zhang B, Li Z (2008) New high-voltage MOSFET with the charge trenches on partial SOI. IEEE Trans Electron Devices 55:1756–61
4. Lin J-T, Lee T-Y, Lin K-C(2008) A 2D simulation study and characterization of a novel vertical SOI MOSFET with a smart source/body tie. Semicond Sci Technol 23:075015
5. Letavic T, Arnold E, Simpson M, Aquino R, Bhimnathwala H, Egloff R, Emmerik A, Wong S, Mukherjee S (1997) High performance 600 V smart power technology based on thin layer silicon-on-insulator. In: Proceedings of 9th International Symposium on Power Semiconductor Devices and IC’s. IEEE, New York, pp 49–52
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Designing process and analysis of a new SOI-MESFET structure with enhanced DC and RF characteristics for high-frequency and high-power applications;PLOS ONE;2024-04-26
2. Improved SOI-MESFET structures for enhanced efficiency and optimized DC/RF characteristics;International Journal of Electronics;2023-10-06
3. Improved multi-recessed p-buffer 4H–SiC metal-semiconductor field-effect transistor with high power added efficiency;Current Applied Physics;2023-05
4. A novel metal–semiconductor device to enhance the current and unilateral power gains and 0 dB frequencies by SiO2 insertion in drift region;Materials Science and Engineering: B;2022-09
5. Synthesis of 3D Nanonetwork Si Structures via Direct Ultrafast Pulsed Nanostructure Formation Technique;Energies;2022-08-18
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3