Electrical parameters of a DC sputtered Mo/n-type 6H-SiC Schottky barrier diode
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference19 articles.
1. The physics and chemistry of the Schottky barrier height
2. Charge transport mechanisms of graphene/semiconductor Schottky barriers: A theoretical and experimental study
3. Electrical characterization and DLTS analysis of a gold/n-type gallium nitride Schottky diode
4. Ta/Si Schottky diodes fabricated by magnetron sputtering technique
5. Barrier height temperature coefficient in ideal Ti/n-GaAs Schottky contacts
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1. 1.2-kV Low-Barrier 4H-SiC JBS Diodes by Virtue of P-Implants Across Dead Field of Current Flow;IEEE Transactions on Electron Devices;2023-08
2. Carbon Nanotubes/N-Si Heterojunction with High Dielectric Constant and Rectification Ratio, Low Dielectric Loss Tangent;ECS Journal of Solid State Science and Technology;2022-02-01
3. Investigation of electrical parameters of Au/P3HT:PCBM/n-6H–SiC/Ag Schottky barrier diode with different current conduction models;Superlattices and Microstructures;2020-10
4. Fabrication of Schottky barrier diodes with the lithium fluoride interface layer and electrical characterization in a wide temperature range;Journal of Alloys and Compounds;2020-03
5. Investigation of inhomogeneous barrier height for Au/n-type 6H-SiC Schottky diodes in a wide temperature range;Superlattices and Microstructures;2018-12
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