Fabrication of Schottky barrier diodes with the lithium fluoride interface layer and electrical characterization in a wide temperature range-Reference-Cited by-同舟云学术

Fabrication of Schottky barrier diodes with the lithium fluoride interface layer and electrical characterization in a wide temperature range

Published:2020-03 Issue: Volume:816 Page:152601
ISSN:0925-8388
Container-title:Journal of Alloys and Compounds
language:en
Short-container-title:Journal of Alloys and Compounds

Author:

Çaldıran Zakir^ORCID

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

Reference37 articles.

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2. The synthesis of SrTiO3 nanocubes and the analysis of nearly ideal diode application of Ni/SrTiO3 nanocubes/n-Si heterojunctions;Taşyürek;Mater. Res. Express,2018

3. The investigation of the electrical properties of Fe3O4/n-Si heterojunctions in a wide temperature range;Deniz;J. Colloid Interface Sci.,2016

4. The effects of the interfacial layer with interface states on controlling the electronic properties of Au/n-GaAs Schottky diode;Soylu;J. Optoelectron. Adv. Mater.,2012

5. The electrical characteristic of the Fe3O4/Si junctions;Çaldıran;J. Alloy. Comp.,2013

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