Exploring the interfacial behavior of SiNWs/Sulphur and Nitrogen-doped carbon dot based heterostructure for near-infrared photodetection application-Reference-Cited by-同舟云学术

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Exploring the interfacial behavior of SiNWs/Sulphur and Nitrogen-doped carbon dot based heterostructure for near-infrared photodetection application

Published:2023-08 Issue: Volume:345 Page:134458
ISSN:0167-577X
Container-title:Materials Letters
language:en
Short-container-title:Materials Letters

Author:

Riaz S. Najes,Roy Dipayan,Bhattacharjee Souvik^ORCID,Chandra Ankita,Chattopadhyay Kalyan Kumar,Sarkar Sourav^ORCID

Funder

Council of Scientific and Industrial Research, India

University Grants Commission

Science and Engineering Research Board

Department of Science and Technology, Ministry of Science and Technology, India

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference21 articles.

1. Ultranarrow-bandwidth planar hot electron photodetector based on coupled dual Tamm plasmons

2. CVD Graphene on Textured Silicon: An Emerging Technologically Versatile Heterostructure for Energy and Detection Applications

3. Photoresponse of porous silicon for potential optical sensing

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