Carbon Nanotubes/N-Si Heterojunction with High Dielectric Constant and Rectification Ratio, Low Dielectric Loss Tangent

Abstract

In this document, the structure of carbon nanotubes behaves as a p-type semiconductor deposited on the n-silicon wafer formed P-N junction, this structure of Au/CNTs/n-Si/Al has novel electric and dielectric properties such as high rectification ratio, low dielectric loss tangent, and high dielectric loss ε′, which increases with declines frequency reaches to 4 × 104 in the positive direction of dielectric constant at a frequency equals 102 Hz and reaches to −1 × 106 in the negative region of dielectric constant at frequency 10 Hz. The dielectric loss tangent (tanδ) has low values raised with decline frequencies their values fluctuate from 0.15 to 0. 20. The ε′ and tanδ have negative values at high and low frequencies, though the ε′ has positive values at mid frequencies. The electrical properties of this device were investigated by studying I–V, Cheung, dv/dlnI, and Norde characterization. The parameters such as rectification ratio (RR), the resistance of junction (Rj), barrier height (ϕ b), and ideality factor were calculated.