Interface state energy distribution in (100)Si/HfO2
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
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1. Spectroscopic charge pumping investigation of the amphoteric nature of Si/SiO2 interface states;Applied Physics Letters;2011-06-06
2. Advanced Analysis of Silicon Insulator Interface Traps in MOSFET's with SiO2 and HfO2 as Gate Dielectrics;ECS Transactions;2009-05-15
3. Analysis of electrical characteristics of Au/SiO2/n-Si (MOS) capacitors using the high–low frequency capacitance and conductance methods;Microelectronic Engineering;2008-11
4. Influence of post-annealing on the electrical properties of metal/oxide/silicon nitride/oxide/silicon capacitors for flash memories;Semiconductor Science and Technology;2008-06-04
5. DISORDERED STRUCTURE AND DENSITY OF GAP STATES IN HIGH-PERMITTIVITY THIN SOLID FILMS;Defects in High-k Gate Dielectric Stacks
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