DISORDERED STRUCTURE AND DENSITY OF GAP STATES IN HIGH-PERMITTIVITY THIN SOLID FILMS
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Publisher
Kluwer Academic Publishers
Link
http://link.springer.com/content/pdf/10.1007/1-4020-4367-8_10.pdf
Reference42 articles.
1. R. Chau, J. Brask, S. Datta, G. Dewey, M. Doczy, B. Doyle, J. Kavalieros, B. Jin, M. Metz, A. Majumdar, and M. Radosavljevic, Application of high-k gate dielectrics and metal gate electrodes to enable silicon and non-silicon logic nanotechnology, Microel. Eng. 80, 1–6(2005).
2. X. J. Zhou, L. Tsetseris, S. N. Rashkeev, D. M. Fleetwood, R. D. Schrimpf, S. T. Pantelides, J. A. Felix, E. P. Gusev, and C. D’Emic, Negative bias-temperature instabilities in metal-oxide-silicon devices with SiO2 and SiOxNy/HfO2 gate dielectrics, Appl. Phys. Lett. 84(22), 4394–4396(2004).
3. S. Harasek, A. Lugstein, H. D. Wanzenboeck, and E. Bertagnolli, Slow trap response of zirconium dioxide thin films on silicon, Appl. Phys. Lett. 83(7), 1400–1402 (2003).
4. C.-W. Chen, C.-H. Chien, T.-H. Perng, M.-J. Yang, J.-S. Liang, P. Lehnen, B.-Y. Tsui, and C.-Y. Chang, Electrical characteristics of thin HfO2 gate dielectrics prepared using different pre-deposition surface treatments. Jpn. J. Appl. Phys. 44(1A), 87–93 (2005).
5. M. Wang, W. He, and T. P. Ma, Electron tunneling spectroscopy study of traps in high-k gate dielectrics: Determination of physical locations and energy levels of traps, Appl. Phys. Lett. 86(19), 192113–192114 (2005).
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