Slow trap response of zirconium dioxide thin films on silicon
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1602577
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1. Dielectric property and thermal stability of HfO2 on silicon
2. Experimental observations of the thermal stability of high-k gate dielectric materials on silicon
3. High-κ gate dielectrics: Current status and materials properties considerations
4. A physical model for the hysteresis phenomenon of the ultrathin ZrO2 film
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1. Analysis of Physical, Ocular, and Aquaphobic Properties of Zirconium Oxide Nanofilms by Varying Sputtering Pressure;Journal of Nanomaterials;2022-05-06
2. Analysis of Structural, Optical, and Aquaphobic Properties of Zirconium Oxide Nanofilms by Varying Sputtering Gas;Advances in Materials Science and Engineering;2022-01-30
3. Charge Trapping and TDDB Characteristics of Ultrathin MOCVD $\hbox{HfO}_{2}$ Gate Dielectric on Nitrided Germanium;IEEE Electron Device Letters;2007-05
4. In situ cleaning effect on the electrical properties of Ge MOS devices by Ar gas anneal;IEEE Transactions on Electron Devices;2006-10
5. The electrical properties of HfO/sub 2/ dielectric on germanium and the substrate doping effect;IEEE Transactions on Electron Devices;2006-10
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