Negative bias-temperature instabilities in metal–oxide–silicon devices with SiO2 and SiOxNy/HfO2 gate dielectrics-Reference-Cited by-同舟云学术

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Negative bias-temperature instabilities in metal–oxide–silicon devices with SiO2 and SiOxNy/HfO2 gate dielectrics

Published:2004-05-31 Issue:22 Volume:84 Page:4394-4396
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Zhou X. J.,Tsetseris L.,Rashkeev S. N.,Fleetwood D. M.,Schrimpf R. D.,Pantelides S. T.,Felix J. A.,Gusev E. P.,D’Emic C.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1757636

Reference20 articles.

1. Dynamic recovery of negative bias temperature instability in p-type metal–oxide–semiconductor field-effect transistors

2. Mechanism of negative‐bias‐temperature instability

3. Negative bias temperature instability: Road to cross in deep submicron silicon semiconductor manufacturing

4. Interface‐trap generation at ultrathin SiO2(4–6 nm)‐Si interfaces during negative‐bias temperature aging

5. Electrochemical Charging of Thermal SiO2 Films by Injected Electron Currents

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1. Aqueous solution-processed AlOx dielectrics and their biased radiation response investigated by an on-site technique;Radiation Physics and Chemistry;2020-05

2. Study of Bias-Temperature Instability in HfO2 sputtered Thin Films by Post Nitrogen Annealing for the Advanced CMOS Technology;Materials Today: Proceedings;2017

3. Activation Energies for Oxide- and Interface-Trap Charge Generation Due to Negative-Bias Temperature Stress of Si-Capped SiGe-pMOSFETs;IEEE Transactions on Device and Materials Reliability;2015-09

4. Effect of body bias on negative bias temperature instability in pMOSFET with SiON gate dielectrics;Solid-State Electronics;2014-01

5. Detection of surface electronic defect states in low and high-k dielectrics using reflection electron energy loss spectroscopy;Journal of Materials Research;2013-10-15

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