Interface‐trap generation at ultrathin SiO2(4–6 nm)‐Si interfaces during negative‐bias temperature aging
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.358977
Reference27 articles.
1. Characteristics of the Surface-State Charge (Qss) of Thermally Oxidized Silicon
2. On the Formation of Surface States during Stress Aging of Thermal Si-SiO[sub 2] Interfaces
3. Kinetics of the Slow‐Trapping Instability at the Si / SiO2 Interface
4. Negative bias stress of MOS devices at high electric fields and degradation of MNOS devices
5. Surface State Formation during Long-Term Bias-Temperature Stress Aging of Thin SiO2–Si Interfaces
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