Author:
Ye Liang,de Jong Michel P.,Kudernac Tibor,van der Wiel Wilfred G.,Huskens Jurriaan
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference68 articles.
1. The International Technology Roadmap for Semiconductors (ITRS), 2013 Edition, Front End Processes, Semiconductor Industry Association, Washington, DC, USA, 2013.
2. Controlled nanoscale doping of semiconductors via molecular monolayer;Ho;Nat. Mater.,2008
3. Wafer-scale, sub-5 nm junction formation by monolayer doping and conventional spike annealing;Ho;Nano Lett.,2009
4. Sub-50 nm Gate Length n-MOSFETs with 10 nm Phosphorus Source and Drain Junctions, Electron Devices Meeting;Ono;1993. IEDM ‘93. Tech. Dig., Int.,1993
5. Monolayer doping via phosphonic acid grafting on silicon: microscopic Insight from Infrared spectroscopy and density functional theory Ccalculations;Longo;Adv. Funct. Mater.,2013
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