Author:
Vandervorst W.,Fleischmann C.,Bogdanowicz J.,Franquet A.,Celano U.,Paredis K.,Budrevich A.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference94 articles.
1. D. Hisamoto, J. Kedzierski, E. Anderson, H. Takeuchi, K. Asano, J. Bokor, A folded-channel MOSFET for deep-sub-tenth micron era, in: Proceedings of the International Electron Devices Meet. 1998. Tech. Dig. (Cat. No.98CH36217), IEEE, 1998, pp. 1032–1034. doi:10.1109/IEDM.1998.746531.
2. Low-voltage tunnel transistors for beyond cmos logic;Seabaugh;Proc. IEEE,2010
3. Intel 22nm 3-D Tri-Gate Transistor Technology | Intel Newsroom. 〈http://newsroom.intel.com/docs/DOC-2032#pressmaterials〉, 2011 (accessed 08.09.16).
4. Complementary silicon-based heterostructure tunnel-FETs with high tunnel rates;Verhulst;IEEE Electron Device Lett.,2008
5. W. Vandervorst, J.L. Everaert, E. Rosseel, M. Jurczak, T. Hoffman, P. Eyben, J. Mody, G. Zschätzsch, S. Koelling, M. Gilbert, T. Poon, J. del Agua Borniquel, M. Foad, R. Duffy, B.J. Pawlak, E.G. Seebauer, S.B. Felch, A. Jain, Y. V. Kondratenko, Conformal doping of FINFETs: a Fabrication and Metrology Challenge, in: AIP Conference Proceedings, AIP, 2008: pp. 449–456. doi:10.1063/1.3033660.
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