Parametric nano-electrical analysis for SiC junctions of a packaged device-Reference-Cited by-同舟云学术

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Parametric nano-electrical analysis for SiC junctions of a packaged device

Published:2022-09-18 Issue: Volume: Page:
ISSN:
Container-title:2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe)
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Author:

Germanicus Rosine Coq¹,Jouha Wadia²,Moultif Niemat²,De Wolf Peter³,Shah Vishal A.⁴,Gammon Peter. M⁴,Luders Ulrike¹,Latry Olivier²^ORCID

Affiliation:

1. Normandie Univ,UNICAEN, Ensicaen, CNRS, Crismat,CAEN,France,14000

2. Normandie Université,Groupe de Physique des Matériaux, UNIROUEN, INSA Rouen, CNRS UMR 6634,Rouen,France,76000

3. Broker Nana Surfaces,Santa Barbara,CA,USA

4. School of Engineering, Warwick University,Coventry,UK,CV47AL

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9935821/9936047/09936397.pdf?arnumber=9936397

Reference23 articles.

1. Advances in AFM for the electrical characterization of semiconductors

2. On the effects of a pressure induced amorphous silicon layer on consecutive spreading resistance microscopy scans of doped silicon

3. Probing Semiconductor Technology and Devices with Scanning Spreading Resistance Microscopy

4. Nanoscale probing of dielectric breakdown at SiO2/3C-SiC interfaces

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. SiC Doping Impact during Conducting AFM under Ambient Atmosphere;Materials;2023-08-01

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