Nanoscale probing of dielectric breakdown at SiO2/3C-SiC interfaces-Reference-Cited by-同舟云学术

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Nanoscale probing of dielectric breakdown at SiO2/3C-SiC interfaces

Published:2011-01 Issue:1 Volume:109 Page:013707
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Eriksson Jens,Roccaforte Fabrizio,Fiorenza Patrick,Weng Ming-Hung,Giannazzo Filippo,Lorenzzi Jean,Jegenyes Nikoletta,Ferro Gabriel,Raineri Vito

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3525806

Reference29 articles.

1. Heterojunctions and superlattices based on silicon carbide

2. Possible formation mechanisms for surface defects observed in heteroepitaxially grown 3C-SiC

3. Alternative techniques to reduce interface traps in n-type 4H-SiC MOS capacitors

4. Fabrication and Characterization of 3C-SiC-Based MOSFETs

5. A New Degradation Mechanism in High-Voltage SiC Power MOSFETs

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ultrahigh growth rate-induced thick 3C-SiC heteroepitaxial layers on 4H-SiC and its oxidation characteristics;Vacuum;2024-11

2. Ultrahigh Growth Rate-Induced Thick 3c-Sic Heteroepitaxial Layers on 4h-Sic and its Oxidation Characteristics;2024

3. Surface defects in 4H-SiC: properties, characterizations and passivation schemes;Semiconductor Science and Technology;2023-06-08

4. Electrical passivation of stacking-fault crystalline defects in MOS capacitors on cubic silicon carbide (3C-SiC) by post-deposition annealing;Journal of Applied Physics;2022-12-28

5. Parametric nano-electrical analysis for SiC junctions of a packaged device;2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe);2022-09-18

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