Investigation of dislocations in composition graded and strain relaxed SiGe epitaxial layer by cathodeluminescence
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference11 articles.
1. Hole mobility improvement in silicon-on-insulator and bulk silicon transistors using local strain
2. Technology booster using strain-enhancing laminated SiN (SELS) for 65nm node HP MPUs
3. Cooperative growth phenomena in silicon/germanium low‐temperature epitaxy
4. Relaxed GexSi1−x structures for III–V integration with Si and high mobility two-dimensional electron gases in Si
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Quantitative Estimation of Strained Si/SiGe Hetero Structure Using C-V Characteristics of Strained Si MOS Capacitors;ECS Transactions;2009-09-25
2. Cathodoluminescence study of dislocation-related luminescence from small-angle grain boundaries in multicrystalline silicon;Applied Physics Letters;2009-03-16
3. Diffusion of Arsenic Through Strained Si/Relaxed Si[sub 1−x]Ge[sub x] Heterostructure;Journal of The Electrochemical Society;2008
4. Cathodoluminescence Investigation of Relaxed Si1-xGexLayer and Composition-Graded SiGe Layer;Japanese Journal of Applied Physics;2007-04-05
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