Performance analysis of nanoscale GeSn MOSFETs for mixed-mode circuit applications

Author:

Mondal Chandrima,Biswas Abhijit

Funder

Jadavpur University

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference41 articles.

1. Interband transitions in SnxGe1−x alloys;He;Phys. Rev. Lett.,1997

2. Possibility of increased mobility in Ge-Sn alloy system;Sau;Phys. Rev. B,2007

3. Towards direct band-to-band tunneling in P-channel tunneling field effect transistor (TFET): technology enablement by germanium-tin (GeSn) IEDM;Yang;Tech. Dig.,2012

4. R. Kotlyar, U.E. Avci, S. Cea, R. Rios, T.D. Linton, K.J. Kuhn, I.A. Young Bandgap engineering of group IV materials for complementary n and p tunneling field effect transistors 102, 2013, 113106-1-4.

5. GeSn quantum well P-channel tunneling FETs fabricated on Si(001) and (111) with improved subthreshold swing;Han;IEEE Electron Device Lett.,2016

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