Etching characteristics of Si using surface discharge plasma under Ar/CF 4 and He/CF 4 conditions
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference7 articles.
1. Plasma grooving system using surface discharge plasma;Hamada;Plasma Chem. Plasma Process.,2009
2. Examination of maskless etching technique using a localized surface discharge plasma;Hamada;IEEJ Trans. Electr. Electron. Eng.,2010
3. T. Hamada, T. Sakoda, Etching Characteristics of Fabricated Grooves on Silicon Solar Cell Using Surface Discharge Plasma, in: Proceedings of the IEEJ Trans. FM, 130, 2010, 999.
4. T. Hamada et al., Maskless etching using atmospheric pressure non-thermal surface discharge plasma, in: Proceeings of the IEEJ Trans. FM, (in Japanese), 130, 2010, 907.
5. Studies on optimal gas supply for a maskless etching system with micro- discharge plasma operated at atmospheric pressure;Hamada;Plasma Chem. Plasma Process.,2012
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1. Silicon flower structures by maskless plasma etching;Heliyon;2023-12
2. A study on the etching characteristics of atmospheric pressure plasma for single-crystal silicon wafer;Vacuum;2021-08
3. Etching Characteristics of SixNy Film on Textured Single Crystalline Silicon Surface Using Ar/CF4 and He/CF4 Surface-Discharge Plasma;Coatings;2020-06-14
4. Electrical and spectral characterization of an atmospheric pressure He/CF4 plasma jet;Physics of Plasmas;2018-08
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