Examination of Maskless Etching Technique Using a Localized Surface Discharge Plasma
Author:
Publisher
Wiley
Subject
Electrical and Electronic Engineering
Reference4 articles.
1. Technical issues and future prospects of non-thermal atmospheric-pressure plasma;Itatani;Journal of Plasma Fusion Research,2003
2. Selective etching of silicon nitride film on single crystalline silicon solar cell using intensive surface discharge;Sakoda;Japanese Journal of Applied Physics,2006
3. Fabrication of electrode groove on silicon solar cell using high-pressure surface discharge;Hamada;IEEJ Transactions on Fundamentals and Materials,2008
4. Reactive ion etching of silicon oxides with ammonia and trifluoromethan. The role of nitrogen in the discharge;Smolinsky;Journal of Electro-chemical Society,1982
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Etching Characteristics of SixNy Film on Textured Single Crystalline Silicon Surface Using Ar/CF4 and He/CF4 Surface-Discharge Plasma;Coatings;2020-06-14
2. Etching characteristics of Si using surface discharge plasma under Ar/CF 4 and He/CF 4 conditions;Materials Science in Semiconductor Processing;2017-08
3. Studies on Optimal Gas Supply For a Maskless Etching System with Micro- Discharge Plasma Operated at Atmospheric Pressure;Plasma Chemistry and Plasma Processing;2012-01-01
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