Expanding thermal plasma for low-k dielectrics: engineering the film chemistry by means of specific dissociation paths in the plasma-Reference-Cited by-同舟云学术

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Expanding thermal plasma for low-k dielectrics: engineering the film chemistry by means of specific dissociation paths in the plasma

Published:2004-01 Issue:4-6 Volume:7 Page:283-288
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Creatore M.,Kessels W.M.M.,Barrell Y.,Benedikt J.,van de Sanden M.C.M.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference21 articles.

1. MRS Bull 1997; 22

2. Low dielectric constant materials for microelectronics

3. Structure and mechanical properties of thin films deposited from 1,3,5-trimethyl-1,3,5-trivinylcyclotrisiloxane and water

4. Comparative study of PECVD SiOCH low-k films obtained at different deposition conditions

5. Plasma enhanced chemical vapor deposited SiCOH dielectrics: from low-kto extreme low-kinterconnect materials

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