Highly efficient formation process for functional silicon oxide layers at low temperatures (≤ 120 °C) using very high-frequency plasma under atmospheric pressure-Reference-Cited by-同舟云学术

Highly efficient formation process for functional silicon oxide layers at low temperatures (≤ 120 °C) using very high-frequency plasma under atmospheric pressure

Published:2019-11 Issue: Volume:60 Page:265-273
ISSN:0141-6359
Container-title:Precision Engineering
language:en
Short-container-title:Precision Engineering

Author:

Kakiuchi Hiroaki,Ohmi Hiromasa,Yasutake Kiyoshi

Funder

KAKENHI

Ministry of Education, Culture, Sports, Science and Technology

Publisher

Elsevier BV

Subject

General Engineering

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