Expanding Thermal Plasma Deposition of Al-Doped ZnO: On the Effect of the Plasma Chemistry on Film Growth Mechanisms-Reference-Cited by-同舟云学术

Expanding Thermal Plasma Deposition of Al-Doped ZnO: On the Effect of the Plasma Chemistry on Film Growth Mechanisms

Published:2015-11-30 Issue:1 Volume:13 Page:54-69
ISSN:1612-8850
Container-title:Plasma Processes and Polymers
language:en
Short-container-title:Plasma Process. Polym.

Author:

Williams Benjamin L.¹,Ponomarev Mikhail V.¹,Verheijen Marcel A.¹,Knoops Harm C. M.¹,Chandramohan Abhinaya¹,Duval Leo¹,van de Sanden Mauritius C. M.¹²,Creatore Mariadriana¹³

Affiliation:

1. Department of Applied Physics; Eindhoven University of Technology; 5600 MB, Eindhoven The Netherlands

2. Dutch Institute for Fundamental Energy (DIFFER); P.O.Box 6336, 5600 HH; Eindhoven The Netherlands

3. Solliance; High Tech Campus 21, 5656 AE; Eindhoven The Netherlands

Funder

European Union's Horizon 2020 Research and Innovation Programme

Publisher

Wiley

Subject

Polymers and Plastics,Condensed Matter Physics

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/ppap.201500179/fullpdf

Reference95 articles.

1. Band gaps, crystal-field splitting, spin-orbit coupling, and exciton binding energies in ZnO under hydrostatic pressure

2. Effects of substrate temperature on the properties of Ga-doped ZnO by pulsed laser deposition

3. Thermal stability of sputter-deposited ZnO thin films

4. The effects of deposition rate on the structural and electrical properties of ZnO:Al films deposited on (112̄0) oriented sapphire substrates

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