Vapor phase decomposition–droplet collection–total reflection X-ray fluorescence spectrometry for metallic contamination analysis on Ge wafers-Reference-Cited by-同舟云学术

Vapor phase decomposition–droplet collection–total reflection X-ray fluorescence spectrometry for metallic contamination analysis on Ge wafers

Published:2005-02 Issue:2 Volume:60 Page:209-213
ISSN:0584-8547
Container-title:Spectrochimica Acta Part B: Atomic Spectroscopy
language:en
Short-container-title:Spectrochimica Acta Part B: Atomic Spectroscopy

Author:

Hellin D.,Geens V.,Teerlinck I.,Van Steenbergen J.,Rip J.,Laureyn W.,Raskin G.,Mertens P.W.,De Gendt S.,Vinckier C.

Publisher

Elsevier BV

Subject

Spectroscopy,Instrumentation,Atomic and Molecular Physics, and Optics,Analytical Chemistry

Reference11 articles.

1. Germanium MOS capacitors incorporating ultrathin high-k gate dielectric;Chui;IEEE Electron Device Lett.,2002

2. The International Technology Roadmap for Semiconductors, Semiconductor Industry Association, Edition 2003, Metrology p 4–5, see also http://public.itrs.net/ for the most recent updates.

3. Determination of metallic contaminants on Ge wafers using direct- and droplet sandwich etch–total reflection X-ray fluorescence spectrometry;Hellin;Spectrochim. Acta Part B,2003

4. Determination of ultra trace contaminants on silicon wafer surfaces using total-reflection X-ray fluorescence TXRF ‘state of the art’;Pahlke;Spectrochim. Acta Part B,2001

5. Validation of vapor phase decomposition–droplet collection–total-reflection X-ray fluorescence spectrometry for metallic contamination analysis of silicon wafers;Hellin;Spectrochim. Acta Part B,2004

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