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Depth profiles of Al impurities implanted in Si wafers determined by means of the high-resolution grazing emission X-ray fluorescence technique

  • Published:2010-06 Issue:6 Volume:65 Page:445-449
  • ISSN:0584-8547
  • Container-title:Spectrochimica Acta Part B: Atomic Spectroscopy
  • language:en
  • Short-container-title:Spectrochimica Acta Part B: Atomic Spectroscopy

Author:

Kayser Y.,Banaś D.,Cao W.,Dousse J.-Cl.,Hoszowska J.,Jagodziński P.,Kavčič M.,Kubala-Kukuś A.,Nowak S.,Pajek M.,Szlachetko J.

Publisher

Elsevier BV

Subject

Spectroscopy,Instrumentation,Atomic and Molecular Physics, and Optics,Analytical Chemistry

Reference21 articles.

1. History of industrial and commercial ion implantation;Yarling;J. Vac. Sci. Technol. A,2000

2. Progress in ion implantation technology for metal surface treatments and other related topics;Iwaki;Int. Conf. Ion Implantation Technol. Proc.,1998

3. Ion implantation in silicon technology;Poate;Ind. Phys.,2003

4. Semiconductor profiling with sub-nm resolution: challenges and solutions;Vandervorst;Appl. Surf. Sci.,2008

5. Quantification in grazing-emission X-ray fluorescence spectrometry;Spolnik;Spectrochim. Acta B,1999

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