Synthesis of GaN microspheres and their properties-Reference-Cited by-同舟云学术

Synthesis of GaN microspheres and their properties

Published:2013-01 Issue: Volume:176 Page:789-795
ISSN:0925-4005
Container-title:Sensors and Actuators B: Chemical
language:en
Short-container-title:Sensors and Actuators B: Chemical

Author:

Bao Keyan,Bao Xiaoyu,Sun Hongxian,Yang Linju,Huang Shenzhen,Yuan Wenjie

Funder

Scientific and Technological Project of Henan Province

Special Foundation of Nanyang Normal University

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Metals and Alloys,Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation,Electronic, Optical and Magnetic Materials

Reference55 articles.

1. On the hydrogen sensing characteristics of a Pd/AlGaN/GaN heterostructure field-effect transistor (HFET);Hsu;Sensors and Actuators B-Chemical,2012

2. Porous GaN on SiO2 and its application to hydrogen gas sensor;Ramizy;Sensors and Actuators B-Chemical,2011

3. Role of surface polarity in self-catalyzed nucleation and evolution of GaN nanostructures;Sahoo;Crystal Growth and Design,2012

4. Analyses of surface temperatures on patterned sapphire substrate for the growth of GaN with metal organic chemical vapor deposition;Li;Applied Surface Science,2011

5. Nucleation and coalescence effects on the density of self-induced GaN nanowires grown by molecular beam epitaxy;Consonni;Applied Physics Letters,2011

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2. Influence of electronic and optical properties of GaN nanoparticles as potential electrocatalyst in hydrogen production;Materials Science in Semiconductor Processing;2017-06

3. Synthesis of hexagonal GaN nanoplates via a convenient solid state reaction;Journal of Alloys and Compounds;2015-01

4. pn-Junction photodiode based on GaN grown on Si (111) by plasma-assisted molecular beam epitaxy;Materials Science in Semiconductor Processing;2013-12

5. High performance room temperature GaN-nanowires hydrogen gas sensor fabricated by chemical vapor deposition (CVD) technique;International Journal of Hydrogen Energy;2013-10