pn-Junction photodiode based on GaN grown on Si (111) by plasma-assisted molecular beam epitaxy-Reference-Cited by-同舟云学术

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pn-Junction photodiode based on GaN grown on Si (111) by plasma-assisted molecular beam epitaxy

Published:2013-12 Issue:6 Volume:16 Page:1859-1864
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Mohd Yusoff M.Z.,Hassan Z.,Ahmed Naser M.,Abu Hassan H.,Abdullah M.J.,Rashid M.

Funder

Universiti Sains Malaysia and Universiti Teknologi MARA

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference25 articles.

1. The Blue Laser Diode: The Complete Story;Nakamura,2000

2. Emerging gallium nitride based devices

3. Frequency dependence of junction capacitance of GaN p–i–n UV detectors

4. Structural properties of GaN grown on AlGaN/AlN stress mitigating layers on 100-mm Si (111) by ammonia molecular beam epitaxy

5. GaN-Based Devices on Si

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1. Numerical study and design of high-efficiency p-In0.1Ga0.9N/i-GaN/n-GaN heterojunction photodiode;Micro and Nanostructures;2023-03

2. Synthesis of gallium nitride nanostructure using pulsed laser ablation in liquid for photoelectric detector;Materials Science in Semiconductor Processing;2022-11

3. Optical properties of LMBE grown c-axis oriented GaN thin films using Surface Plasmon Resonance technique;Optical Materials;2022-09

4. Self-powered photodetectors based on a ZnTe–TeO2 composite/Si heterojunction with ultra-broadband and high responsivity;Journal of Materials Science;2018-02-20

5. Epitaxial growth of nonpolar GaN films on r-plane sapphire substrates by pulsed laser deposition;Materials Science in Semiconductor Processing;2016-03

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