Self-powered photodetectors based on a ZnTe–TeO2 composite/Si heterojunction with ultra-broadband and high responsivity-Reference-Cited by-同舟云学术

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Self-powered photodetectors based on a ZnTe–TeO2 composite/Si heterojunction with ultra-broadband and high responsivity

Published:2018-02-20 Issue:10 Volume:53 Page:7562-7570
ISSN:0022-2461
Container-title:Journal of Materials Science
language:en
Short-container-title:J Mater Sci

Author:

Song Zengcai,Liu Yu^ORCID,Wang Qingzheng,Yuan Sheng,Yang Yangrui,Sun Xinjuan,Xin Yanhui,Liu Mingtang,Xia Zhenwei

Funder

the National Science Foundation for Young Scientists of China

the Key Research Projects of Henan High Education Institutions

Publisher

Springer Science and Business Media LLC

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

http://link.springer.com/article/10.1007/s10853-018-2093-y/fulltext.html

Reference27 articles.

1. Yang L, Wang S, Zeng Q, Zhang Z, Peng LM (2013) Carbon nanotube photoelectronic and photovoltaic devices and their applications in infrared detection. Small 9:1225–1236

2. Xu Z, Lin S, Li X, Zhang S, Wu Z, Xu W, Lu Y, Xu S (2016) Monolayer MoS2/GaAs heterostructure self-driven photodetector with extremely high detectivity. Nano Energy 23:89–96

3. Boutramine A, Nafidi A, Barkissy D, Hannour A, Elanique A, Gouti TE (2016) Application of the transition semiconductor to semimetal in type II nanostructure superlattice for mid-infrared optoelectronic devices. Appl Phys A Mater 122:330

4. Naquin C, Lee M, Edwards H, Mathur G, Chatterjee T, Maggio K (2014) Negative differential transconductance in silicon quantum well metal-oxide-semiconductor field effect/bipolar hybrid transistors. Appl Phys Lett 105:213507

5. Yusoff MZM, Hassan Z, Ahmed NM, Hassan HA, Abdullah MJ, Rashid M (2013) pn-Junction photodiode based on GaN grown on Si (111) by plasma-assisted molecular beam epitaxy. Mater Sci Semicond Process 16:1859–1864

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3. Mixed‐Dimensional 2D PtSe₂/3D a‐Ga₂O₃ Heterojunction for Self‐Driven Broadband Photodetector with High Responsivity in UV Region;physica status solidi (a);2024-04-28

4. Deep and Near UV Photodetector Based Upon Zirconium Diboride and n-Doped Silicon Carbide;IEEE Sensors Journal;2024-03-01

5. Highly Weak-light Sensitive and Dual-band Switchable Photodetector Based on CuI/Si Unilateral Heterojunction;Journal of Inorganic Materials;2024

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