On the hydrogen sensing characteristics of a Pd/AlGaN/GaN heterostructure field-effect transistor (HFET)-Reference-Cited by-同舟云学术

On the hydrogen sensing characteristics of a Pd/AlGaN/GaN heterostructure field-effect transistor (HFET)

Published:2012-04 Issue:1 Volume:165 Page:19-23
ISSN:0925-4005
Container-title:Sensors and Actuators B: Chemical
language:en
Short-container-title:Sensors and Actuators B: Chemical

Author:

Hsu Chi-Shiang,Chen Huey-Ing,Chang Chung-Fu,Chen Tai-You,Huang Chien-Chang,Chou Po-Cheng,Liu Wen-Chau

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Metals and Alloys,Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation,Electronic, Optical and Magnetic Materials

Reference32 articles.

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2. Normally off AlGaN/GaN metal-2DEG tunnel-junction field-effect transistors;Yuan;IEEE Electron Device Lett.,2011

3. Monolithically integrated enhancement/depletion-mode AlGaN/GaN HEMT inverters and ring oscillators using CF4 plasma treatment;Cai;IEEE Trans. Electron Devices,2006

4. On a GaN-based light-emitting diode with an indium-tin-oxide (ITO) direct-Ohmic contact structure;Liu;IEEE Photonics Technol. Lett.,2011

5. Effect of humidity on hydrogen sensitivity of Pt-gated AlGaN/GaN high electron mobility transistor based sensors;Lo;Appl. Phys. Lett.,2010

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