Stress control in GaN/sapphire templates for the fabrication of crack-free thick layers
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference16 articles.
1. Growth and separation related properties of HVPE-GaN free-standing films
2. Thick GaN layers grown by hydride vapor-phase epitaxy: hetero- versus homo-epitaxy
3. Growth of gallium nitride by hydride vapor-phase epitaxy
4. Cracking of GaN films
5. Crystallite coalescence: A mechanism for intrinsic tensile stresses in thin films
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