Optical properties of digital-alloy In0.49(Ga1−zAlz)0.51P/GaAs and InGaP/In0.49(Ga1−zAlz)0.51P multi-quantum wells grown by molecular-beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference15 articles.
1. High temperature (77 °C) operation of 634 nm InGaAlP multiquantum‐well laser diodes with tensile‐strained quantum wells
2. High‐temperature operation of high‐power InGaAlP visible light laser diodes with an In0.5+δGa0.5−δP active layer
3. Photoluminescence of compressively strained AlGaInP/GaInP quantum well structures grown by MOCVD
4. Photoluminescence from GaInP layers and GaInP/AlGaInP quantum wells grown by molecular beam epitaxy with varying growth temperature, phosphorus gas pressure, and substrate orientation
5. Room temperature operation of ultrashort wavelength (619 nm) AlGaInP/GaInP tensile strained quantum well lasers
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Modeling and experimental demonstration of short-wavelength carrier collection enhancement in Ga0.51In0.49P solar cells using graded (AlzGa1-z)xIn1-xP window-emitter structures;Solar Energy Materials and Solar Cells;2019-11
2. InAlAs Graded Metamorphic Buffer with Digital Alloy Intermediate Layers;Japanese Journal of Applied Physics;2012-08-01
3. InAlAs Graded Metamorphic Buffer with Digital Alloy Intermediate Layers;Japanese Journal of Applied Physics;2012-07-18
4. Optical characterization of digital alloy In0.49Ga0.51P∕In0.49(Ga0.6Al0.4)0.51P multi-quantum-wells grown by molecular beam epitaxy;Journal of Applied Physics;2006-11
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